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 HBM (Human Body Model) & MM (Machine Model)
The objective is to provide reliable, repeatable
HBM & MM ESD test results so that accurate classifications can
be performed and microcircuits can be classified according to their susceptibility
to damage or degradation by exposure to a defined electrostatic Human
Body Model (HBM) & Machine Model (MM) discharge (ESD). An ESD event can
destroy an IC in a number of ways, resulting in one or more of these attributes:
junction leakage, short, or burn-out; dielectric rupture; resistor-metal
interface rupture; resistor/metal fusing; and die surface charging.
Field-Induced
Charged Device Model (CDM)
CDM testing is used to classify integrated
circuits according to their triboelectric susceptibility.
The charged-device-model simulates
charging/discharging events that occur in production equipment
and processes. Potential for CDM ESD events occurs whenever
there is metal-to-metal contact in manufacturing. One
of many examples is a device sliding down a shipping tube
hitting a metal surface. Discharges to devices on unterminated
circuit assemblies are also well-modeled by the CDM test.
DM ESD events not only reduce assembly yields but can
also produce device damage that goes undetected by factory
test and later is the cause of a latent failure. |
Click graphic
for larger version
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Latch-up
Latch-up characteristics are extremely important
in determining product reliability and minimizing No Trouble
Found (NTF) and Electrical Overstress (EOS) failure due
to latch-up. This test is applicable to NMOS, CMOS, bipolar, all
variations and combinations of these technologies. Latch-up is not
related to a specific mechanism but is an electrical failure
characteristics occurs when a device is subjected to this test.
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